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PD - 97044A
IRF6668
DirectFET Power MOSFET
l l l l l l l l l
RoHS compliant containing no lead or bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
Qg
tot
Qgd
7.8nC
80V max 20V max 12m@ 10V
22nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP MZ MN
DirectFET ISOMETRIC
The IRF6668 combines the latest HEXFET(R) power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668 is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(10%) or 36V-60V ETSI input voltage range systems. The IRF6668 is also ideal for secondary side synchronous rectification in regulated isolated DCDC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Description
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 70C IDM IS @ TC = 25C IS @ TC = 70C ISM Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V
Max.
Units
V
Pulsed Drain Current Continuous Source Current (Body Diode) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)e
e
f f
f f
80 20 55 44 170 81 52 170
A
TC measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junction temperature.
Notes:
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IRF6668
Electrical Characteristic @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS BVDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG (Internal) td(on) tr td(off) tf Ciss Coss Crss Coss Coss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance
Min.
80 --- --- 3.0 --- --- --- --- --- 22 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 0.097 12 4.0 -11 --- --- --- --- --- 22 4.8 1.6 7.8 7.8 9.4 12 1.0 19 13 7.1 23 1320 310 76 1400 200 --- --- 15 4.9 --- 20 250 100 -100 --- 31 --- --- 12 --- --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC
Conditions
VGS = 0V, ID = 250A V V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 12A g V mV/C A nA S VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 12A VDS = 40V nC VGS = 10V ID = 12A See Fig. 14 VDS = 16V, VGS = 0V VDD = 40V, VGS = 10V ID = 12A RG= 6.2 See Fig. 16 VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VGS = 0V, VDS = 64V, f=1.0MHz g VDS = VGS, ID = 100A
Avalanche Characteristics
Parameter
EAS Single Pulse Avalanche Energy
Min.
---
Typ. Max. Units
--- 24 mJ
Conditions
TJ = 25C, IS = 23A, RG = 25 L = 0.088mH. See Fig. 13
Diode Characteristics
Parameter
VSD trr Qrr Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min.
--- --- ---
Typ. Max. Units
--- 34 40 1.3 51 60 V ns nC
Conditions
TJ = 25C, IS = 12A, VGS = 0V g TJ = 25C, IF = 12A, VDD = 40V di/dt = 100A/s g
Notes:
Pulse width 400s; duty cycle 2%.
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IRF6668
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
h h f
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted
hj ij fj
Parameter
Typ.
--- 12.5 --- 1.0
Max.
45 --- 1.4 ---
Units
C/W
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
R1 R1 J 1 2 R2 R2 R3 R3 C 1 2 3 3 C
0.1
J
C i= i/R i C i= i/R i
Ri (C/W) i (sec) 0.3173 0.000048 0.5283 0.000336 0.5536 0.001469
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 1. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Surface mounted on 1 in. square Cu, steady state (still air). Used double sided cooling, mounted on 1 in. square Cu board
PCB with small clip heatsink (still air).
R is measured at TJ of approximately 90C.
Note
Note
Note
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IRF6668
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
6.0V 10
10 6.0V
60s PULSE WIDTH
Tj = 25C 1 0.1 1 VDS, Drain-to-Source Voltage (V) 10
1 0.1
60s PULSE WIDTH
Tj = 150C 1 V DS, Drain-to-Source Voltage (V)
10
Fig 2. Typical Output Characteristics
1000 VDS = 10V 60s PULSE WIDTH
ID, Drain-to-Source Current (A)
Fig 3. Typical Output Characteristics
2.0 ID = 12A
Typical RDS(on) (Normalized)
VGS = 10V
100
1.5
10
T J = 150C T J = 25C T J = -40C
1.0
1
0.1 2 4 6 8 10 12
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 4. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 5. Normalized On-Resistance vs. Temperature
12.0 ID= 12A
VGS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0 VDS= 64V VDS= 40V
C, Capacitance (pF)
1000
Ciss Coss
100
Crss
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
2
4
6
8 10 12 14 16 18 20 22 24
QG, Total Gate Charge (nC)
Fig 6. Typical Capacitance vs.Drain-to-Source Voltage
Fig 7. Typical Total Gate Charge vs Gate-to-Source Voltage
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IRF6668
RDS(on), Drain-to -Source On Resistance (m )
60 ID = 12A 50
Typical RDS(on) ( m)
60 T J = 25C 50 40 30 20 10 Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V
40 30 20 10 T J = 25C 0 4 6 8 10 12 14 16
T J = 125C
0 0 20 40 60 80 100
VGS, Gate -to -Source Voltage (V)
ID, Drain Current (A)
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
Fig 9. Typical On-Resistance vs. Drain Current
6.0
Typical VGS(th) , Gate threshold Voltage (V)
ISD, Reverse Drain Current (A)
100
T J = 150C T J = 25C T J = -40C
5.0
10
4.0 ID = 100A ID = 250A
1 VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
3.0
ID = 1.0mA ID = 1.0A
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 10. Typical Source-Drain Diode Forward Voltage
1000
Fig 11. Typical Threshold Voltage vs. Junction Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID 80
TOP
ID, Drain-to-Source Current (A)
100
100sec 1msec
4.3A 7.6A BOTTOM 23A
60
10
10msec
40
1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
20
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
Fig12. Maximum Safe Operating Area
Fig 13. Maximum Avalanche Energy vs. Drain Current
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IRF6668
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 14a. Gate Charge Test Circuit
Fig 14b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 15b. Unclamped Inductive Waveforms
Fig 15a. Unclamped Inductive Test Circuit
VDS VGS RG
RD
90%
D.U.T.
+
VDS
- VDD
10%
10V
Pulse Width 1 s Duty Factor 0.1 %
VGS
td(on) tr td(off) tf
Fig 16a. Switching Time Test Circuit
Fig 16b. Switching Time Waveforms
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IRF6668
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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IRF6668
DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE A B C D E F G H J K L M N P MIN 6.25 4.80 3.85 0.35 0.68 0.68 0.93 0.63 0.28 1.13 2.53 0.59 0.03 0.08 MAX 6.35 5.05 3.95 0.45 0.72 0.72 0.97 0.67 0.32 1.26 2.66 0.70 0.08 0.17 IMPERIAL MIN 0.246 0.189 0.152 0.014 0.027 0.027 0.037 0.025 0.011 0.044 0.100 0.023 0.001 0.003 MAX 0.250 0.201 0.156 0.018 0.028 0.028 0.038 0.026 0.013 0.050 0.105 0.028 0.003 0.007
DirectFET Part Marking
8
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IRF6668
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6668). For 1000 parts on 7" reel, order IRF6668TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX MIN MIN CODE MIN MIN MAX MAX MAX N.C A 6.9 12.992 330.0 177.77 N.C N.C N.C 0.75 0.795 N.C B 20.2 19.06 N.C N.C N.C C 0.53 0.504 0.50 12.8 13.5 0.520 13.2 12.8 D 0.059 0.059 N.C 1.5 1.5 N.C N.C N.C E 2.31 3.937 N.C 100.0 58.72 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.47 0.488 12.4 N.C 11.9 0.567 14.4 12.01 H 0.47 0.469 11.9 N.C 11.9 0.606 15.4 12.01
NOTE: CONTROLLING DIMENSIONS IN MM DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 5.45 0.219 5.55 0.201 0.209 5.10 5.30 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
CODE A B C D E F G H
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/05
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